Amphoteric behavior of Ge in GaAs: An LDA analysis

Modelling and Simulation in Materials Science and Engineering

Volumn 19, Issue 3, 2011, Pages

  Giorgi, G ^a   Yamashita, K ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPHOTERIC BEHAVIOR; ATOMIC DISTANCES; BAND EDGE; BAND GAPS; D ORBITALS; DEFECTIVE SYSTEMS; DONOR-ACCEPTORS; GAAS; III-V ALLOYS; LDA + U; LINEAR RELATIONSHIPS; SELF-COMPENSATION; SELF-PASSIVATION; SUBSTITUTIONAL DEFECTS; SUPER CELL; THERMAL IONIZATION ENERGY; THERMODYNAMIC STABILIZATION;

CRYSTAL DEFECTS; DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM ARSENIDE; PASSIVATION; SEMICONDUCTING GALLIUM; STABILIZATION;

GERMANIUM;

EID: 79955391764     PISSN: 09650393     EISSN: 1361651X     Source Type: Journal    
DOI: 10.1088/0965-0393/19/3/035001     Document Type: Article

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