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Volumn 55, Issue 4, 1997, Pages 2195-2206

Coexistence of weakly and strongly localized donor states in semiconductors

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EID: 0347282371     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.2195     Document Type: Article
Times cited : (4)

References (43)
  • 28
    • 0011444812 scopus 로고
    • Ya.B. Zel'dovich, Fiz. Tverd. Tela 1, 1637 (1959) [Sov. Phys. Solid State 1, 1497 (1960)].
    • (1959) Fiz. Tverd. Tela , vol.1 , pp. 1637
  • 36
    • 36149014806 scopus 로고
    • P.-O. Löwdin, Phys. Rev. 139, A357 (1965).
    • (1965) Phys. Rev. , vol.139 , pp. A357
  • 43
    • 0017925448 scopus 로고
    • J. H. M. Stoelinga, J. Phys. Chem. Solids 39, 873 (1978)] show that the relative chemical shifts for shallow-level donors in GaAs are proportional to the square of the donor-envelope wave function at the center. The absolute values of the central-cell potential well deduced from these data are still too large.
    • (1978) J. Phys. Chem. Solids , vol.39 , pp. 873
    • Stoelinga, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.