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Volumn 16, Issue 49, 2004, Pages 8991-9000
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Properties of intrinsic di-interstitials in GaAs
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Author keywords
[No Author keywords available]
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Indexed keywords
AGGLOMERATION;
COMPLEXATION;
ELECTRIC CHARGE;
ION IMPLANTATION;
PROBABILITY DENSITY FUNCTION;
SEMICONDUCTING SILICON;
ATOMISTIC MODELS;
CHARGE STATES;
DI-INTERSTITIALS;
THERMODYNAMIC EQUILIBRIUM;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 10844286446
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/16/49/014 Document Type: Article |
Times cited : (22)
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References (17)
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