High-field ODMR investigation of the EL2 defect in semi-insulating GaAs

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 353-357

  Tkach, I ^a   Krambrock, K ^b   Overhof, H ^c   Spaeth, J M ^c  

^a UNIVERSITY OF STUTTGART   (Germany)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

EL2; GaAs; MCDA detected ENDOR

Indexed keywords

ABSORPTION; BINDING ENERGY; CRYOSTATS; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; GONIOMETERS; HAMILTONIANS; PARAMAGNETIC RESONANCE; TENSORS;

ELECTRON NUCLEAR DOUBLE RESONANCE (ENDOR); MAGNETIC CIRCULAR DICHROISM (MCD); MICROWAVE CAVITIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0345873475     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.072     Document Type: Conference Paper

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