Mechanistic investigation of the growth of Fe1-xCoxSi (0 ≤ x ≤ 1) and Fe5(Si1-yGey)3 (0 ≤ y ≤ 0.33) ternary alloy nanowires

ACS Nano

Volumn 5, Issue 4, 2011, Pages 3268-3277

  Higgins, Jeremy M ^a   Carmichael, Penelope ^a,b   Schmitt, Andrew L ^a   Lee, Stephen ^a   Degrave, John P ^a   Jin, Song ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

chemical vapor deposition; diffusion; germanide; nanowire; silicide; single source precursor

Indexed keywords

DOPING PROCESS; GERMANIDE; GERMANIDES; GROWTH SUBSTRATES; METAL ELEMENTS; METAL SILICIDE; SI ALLOYS; SILICIDE FILMS; SILICIDE NANOWIRES; SINGLE SOURCE PRECURSOR; SYNTHETIC ROUTES; VAPOR PHASE PRECURSORS;

CERIUM ALLOYS; COBALT; GERMANIUM; IRON ALLOYS; NANOWIRES; PYROLYSIS; SEMICONDUCTOR DOPING; SILICIDES; SILICON; SILICON ALLOYS; SUBSTRATES;

CHEMICAL VAPOR DEPOSITION;

EID: 79955369657     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200387y     Document Type: Article

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