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Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

Charge sensing in intrinsic silicon quantum dots

(4) Podd, G J a Angus, S J b Williams, D A a Ferguson, A J c

a HITACHI CAMBRIDGE LABORATORY (United Kingdom)

b UNIVERSITY OF MELBOURNE (Australia)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; CHARGE SENSING; MANY ELECTRON; QUANTUM DOT; SILICON QUANTUM DOTS; SILICON SINGLE-ELECTRON TRANSISTORS;

OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 77749277258 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3318463 Document Type: Article

Times cited : (29)

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