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Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

(7) Junaid, M a Hsiao, C L a Palisaitis, J a Jensen, J a Persson, P O A a Hultman, L a Birch, J a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BAND-EDGE EMISSIONS; DIRECT-CURRENT; GAN EPILAYERS; GAN EPITAXIAL FILMS; HIGH PERFORMANCE DEVICES; MAGNETRON SPUTTER EPITAXY; OPTICAL QUALITIES; PHOTOLUMINESCENCE PEAK; SPUTTERING TARGET; THREADING DISLOCATION DENSITIES; WILLIAMSON-HALL PLOT; X RAY ROCKING CURVE;

DC POWER TRANSMISSION; EPILAYERS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; LIQUIDS; MAGNETRONS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 79954523846 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3576912 Document Type: Article

Times cited : (57)

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