Structural properties of GaN films with AlN buffer layers with varying growth temperatures by plasma-assisted molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2265-2269

  Shim, Byoung Rho ^a   Okita, Hideyuki ^b   Jeganathan, Kulandaivel ^a   Shimizu, Mitsuaki ^a   Okumura, Hajime ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

High resolution X ray diffraction; Plasma assisted molecular beam epitaxy; Screw and edge threading dislocation; Two step AlN buffer growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM; HIGH-RESOLUTION X-RAY DIFFRACTION; PLASMA-ASSITED MOLECULAR BEAM EPITAXY; SCREW AND EDGE THREADING DISLOCATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038347880     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2265     Document Type: Article

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