Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Lee, Sanghwa ^c   Choe, Hyeokmin ^c   Oh, Taegeon ^c   Jean, Jai Weon ^c   Shin, Boa ^c   Sohn, Yuri ^c   Kim, Chinkyo ^a   Choi, Jaewan ^b   Moon, Yong Tae ^b   Lee, Jeong Soo ^b  

^a Kyung Hee University   (South Korea)

^b LG Electronics Inc   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; MORPHOLOGY; NUCLEATION; SYNCHROTRONS; X RAY DIFFRACTION;

ISLAND MERGING; SAPPHIRE SUBSTRATES; THREADING DISLOCATIONS;

THIN FILMS;

EID: 34247212899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721401     Document Type: Article

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