Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Paskov, P P ^a   Monemar, B ^a   Paskova, T ^b   Preble, E A ^b   Hanser, A D ^b   Evans, K R ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; DEEP LEVEL; DEFECT EMISSION; DONOR-BOUND EXCITON; EPI-READY SUBSTRATES; FINE STRUCTURES; GAN SUBSTRATE; HYDRIDE VAPOUR PHASE EPITAXIES; M-PLANE; OPTICAL CHARACTERIZATION; POLISHED SUBSTRATES; RELATIVE INTENSITY; SAMPLE THICKNESS; SPATIALLY RESOLVED; STRUCTURAL QUALITIES; VARIABLE TEMPERATURE;

EPITAXIAL GROWTH; EXCITONS; GALLIUM NITRIDE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 70349375837     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880918     Document Type: Article

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