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Volumn 98, Issue 14, 2011, Pages

Depth progression of dissociation reaction of the 1.014-eV photoluminescence copper center in copper-diffused silicon crystal measured by deep-level transient spectroscopy

(2) Nakamura, Minoru a Murakami, Susumu a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; CONCENTRATION-DEPTH PROFILE; COPPER CENTERS; DIFFUSED SILICON; DISSOCIATION ENERGIES; DISSOCIATION PRODUCTS; DISSOCIATION REACTIONS; DLTS; INTERSTITIAL COPPER; OUT-DIFFUSION; PL MEASUREMENTS; SAMPLE SURFACE; SURFACE REGION; TRANSFORMATION REACTIONS;

ANNEALING; COPPER; DISSOCIATION; PHOTOLUMINESCENCE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 79954475278 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575574 Document Type: Article

Times cited : (5)

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