Growth and structural characterization of epitaxial Cu/Nb multilayers

Thin Solid Films

Volumn 519, Issue 13, 2011, Pages 4137-4143

  Budiman, A S ^a   Li, N ^a   Wei, Q ^a   Baldwin, J K ^a   Xiong, J ^a,c   Luo, H ^a   Trugman, D ^a   Jia, Q X ^a   Tamura, N ^b   Kunz, M ^b   Chen, K ^b   Misra, A ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Cu Nb; Epitaxy; Evaporation; Multilayers; Plasticity; Quasi single crystal; Synchrotron based Laue microdiffraction; Transmission electron microscopy; X ray diffraction

Indexed keywords

CU/NB; DEPOSITION PARAMETERS; DEPOSITION TEMPERATURES; ELECTRON BEAM EVAPORATION; EPITAXY; HIGH DEPOSITION TEMPERATURE; IN-SITU; MULTI-LAYERED FILMS; NANO LAYERS; NANO SCALE; PINCHOFF; POLYCRYSTALLINE; QUASI-SINGLE CRYSTAL; SAPPHIRE SUBSTRATES; SPHEROIDIZATION; STRUCTURAL CHARACTERIZATION;

DIFFRACTION; ELECTRON BEAMS; EPITAXIAL FILMS; EPITAXIAL GROWTH; EVAPORATION; MULTILAYERS; OPTIMIZATION; PHASE TRANSITIONS; PLASTICITY; SINGLE CRYSTALS; SYNCHROTRONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAYS;

MULTILAYER FILMS;

EID: 79954446997     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.077     Document Type: Article

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