Radiation characterization of 512Mb SDRAMs

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2007, Pages 204-207

  Lawrence, Reed K ^a  

^a BAE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FAILURE ANALYSIS; IONIZING RADIATION; QUALITY ASSURANCE; RADIATION; RELIABILITY; STATIC RANDOM ACCESS STORAGE;

DATA RATES; DIFFERENT MODES; PROTON TESTING; SINGLE EVENT LATCH-UP; SINGLE-EVENT UPSET; SPACE RADIATIONS; TOTAL IONIZING DOSE;

RADIATION EFFECTS;

EID: 47849095854     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2007.4342566     Document Type: Conference Paper

References (4)

1. R. Ladbury, M.D. Berg, H. Kim, K. LaBel, M. Friendlich, R. Koga, J. George, S. Crain, P. Yu and R.A. Reed, "Radiation Performance of 1Gbit DDR SDRAMs Fabricated in the 90nm CMOS Technology Node," IEEE Radiation Effects Data Workshop, pp. 126-130, 2006.
2. T. Langley, R. Koga and T. Morris, "Single-event Effects Test Results of 512MB SDRAMs," IEEE Radiation Effects Data Workshop, pp. 98-101, 2003.
3. EADS Astrum GmbH, IDA TU Braunschweig, Hirex Engineering and European Space Agency, "Radiation Evaluation of DDR/DDRII SDRAM Memories," https://escies.org/GetFile?rsrcid=1111, 2006.
4. T. Dargnies, J. Herath, T. Ng, C. Val. J.F. Goupy and J.P. David, "Radiation Tolerant and Intelligent Memory for Space," https://klabs.org/mapld05/presento/1025_dargnies_a.html, 2005 MAPLD International Conference