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Volumn 21, Issue 15, 2011, Pages 5805-5811
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Electric field-induced nanopatterning of reduced graphene oxide on Si and a p-n diode junction
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Author keywords
[No Author keywords available]
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Indexed keywords
APPLIED VOLTAGES;
BASAL PLANES;
CHARGE TRANSPORT;
CONDUCTIVE ATOMIC FORCE MICROSCOPY;
ELECTRONIC COMPONENT;
HIGH CONDUCTIVITY;
HIGH DENSITY;
LANGMUIR-BLODGETT METHODS;
LOCAL ELECTRIC FIELD;
N-DOPING;
NANO PATTERN;
NANOPATTERNING;
NEGATIVE BIAS;
NON DESTRUCTIVE;
P-DOPING;
P-N DIODE;
P-TYPE;
SI SUBSTRATES;
SINGLE-POT PROCESS;
ATOMIC FORCE MICROSCOPY;
CHARGE TRANSFER;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC FIELDS;
GRAPHENE;
ION EXCHANGE;
NANOLITHOGRAPHY;
ORGANIC POLYMERS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DIODES;
SUBSTRATES;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79953213366
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/c0jm03939j Document Type: Article |
Times cited : (14)
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References (32)
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