SCOPUS 정보 검색 플랫폼

Volumn 518, Issue 18, 2010, Pages 5237-5241

X-ray diffraction analysis of thermally-induced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates

(13) Conchon, F a Renault, P O a Goudeau, P a Le Bourhis, E a Sondergard, E b Barthel, E b Grachev, S b Gouardes, E c Rondeau, V c Gy, R c Lazzari, R d Jupille, J d Brun, N e

a UNIVERSITÉ DE POITIERS (France)

b Laboratoire de Surface du Verre et Interfaces (SVI) (France)

c SAINT GOBAIN RECHERCHE (France)

d INSTITUT DES NANOSCIENCES DE PARIS (France)

e UNIVERSITÉ PARIS SUD (France)

Author keywords

Magnetron sputtering; Residual stresses; X ray diffraction; Zinc oxide

Indexed keywords

ARGON ATMOSPHERES; IN-SITU X-RAY DIFFRACTION; POST DEPOSITION ANNEALING; SI SUBSTRATES; THERMALLY ACTIVATED; ZNO FILMS;

ARGON; DIFFRACTION; MAGNETRON SPUTTERING; METALLIC FILMS; RESIDUAL STRESSES; SILICON; STOICHIOMETRY; STRESS RELAXATION; X RAY DIFFRACTION; X RAYS; ZINC; ZINC OXIDE;

X RAY DIFFRACTION ANALYSIS;

EID: 77955655241 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.04.037 Document Type: Article

Times cited : (10)

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