Selective intermixing of InGaAs/GaAs quantum dot infrared photodetectors

IEEE Journal of Quantum Electronics

Volumn 47, Issue 5, 2011, Pages 577-590

  McKerracher, Ian ^a   Wong Leung, Jenny ^a   Jolley, Greg ^a   Fu, Lan ^a   Tan, Hoe H ^a   Jagadish, Chennupati ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Annealing; impurity free vacancy disordering; intermixing; quantum dot infrared photodetectors; spectral tuning

Indexed keywords

AS-GROWN; DIELECTRIC LAYER; DOTS IN A WELLS; ELECTRON BEAM EVAPORATION; IMPURITY-FREE VACANCY DISORDERING; INGAAS/GAAS; INTERMIXING; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPERATING TEMPERATURE; PEAK RESPONSE; PEAK RESPONSIVITY; PHOTORESPONSES; QUANTUM DOT INFRARED PHOTODETECTOR; QUANTUM DOT INFRARED PHOTODETECTORS; QUANTUM WELL DETECTORS; RESPONSIVITY; SELECTIVE INTERMIXING; SPECIFIC DETECTIVITY; SPECTRAL PHOTORESPONSE; SPECTRAL TUNING; TIO;

DETECTORS; INFRARED DETECTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; TUNING;

PHOTODETECTORS;

EID: 79953173954     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2105255     Document Type: Article

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