Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7039, Issue , 2008, Pages

  McKerracher, I R ^a   Fu, L ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Impurity free vacancy disordering; Intermixing; Quantum well; Sputter deposition

Indexed keywords

HETEROJUNCTIONS; MAGNETRON SPUTTERING; MIXING; MONOLITHIC INTEGRATED CIRCUITS; NITRIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SILICON; SPUTTER DEPOSITION; VACANCIES;

AMBIENT GASES; ENCAPSULANT; ENCAPSULANTS; FILM PROPERTIES; FREE VACANCIES; GROWTH TECHNIQUES; HETEROSTRUCTURE; INTERMIXING; MONOLITHIC INTEGRATIONS; NITRIDE FILMS; QUANTUM HETEROSTRUCTURES; QUANTUM WELL; QUANTUM WELL INTERMIXING; QUANTUM WELLS; SPUTTERING PROCESSES; SURFACE DAMAGES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 56249088966     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793568     Document Type: Conference Paper

References (17)

1. Barbarin, Y., Bente, E. A. J. M., Marquet, C., Leclere, E. J. S., Binsma, J. J. M. and Smit, M. K., "Measurement of reflectivity of butt-joint active-passive interfaces in integrated extended cavity lasers," IEEE Photonics Technology Lett. 17(11), 2265-2267 (2005).
2. Camras, M. D., Holonyak, Jr., N., Burnham, R. D., Streifer, W., Scifres, D. R., Paoli, T. L., and Lindstrom, C., "Wavelength modification of Al[sub x]Ga[sub 1 - x]As quantum well heterostructure lasers by layer interdiffusion," J. Appl. Phys. 54(10), 5637 (1983).
3. McKee, A., McLean, C. J., Lullo, G., Bryce, A. C., De La Rue, R. M., Marsh, J. H., and Button, C. C., "Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing," IEEE J. Quantum Electronics 33(1), 45-55 (1997).
4. Elman, B., Koteles, E. S., Melman, P. and Armiento, C. A., "GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing," J. Appl. Phys. 66(5), 2104 (1989).
5. Chi, J. Y., Wen, X., Koteles, E. S., and Elman, B., "Spatially selective modification of GaAs/AlGaAs quantum wells by SiO[sub 2] capping and rapid thermal annealing," Appl. Phys. Lett. 55(9), 855 (1989).
6. Buda, M., Deenapanray, P. N. K., Fu, L., Tan, H. H., Reece, P., Dao, L. V., Gal, M. and Jagadish, C., "Quantum well intermixing for optoelectronic device integration," Proc. IEEE 23rd Int. Conf. on Microelectronics (MIEL) 1, 279-283 (2002).
7. Bryce, A. C., Marsh, J.H., Yanson, D.A., Kowalski, O.P., Kim, S.S., "Selective quantum dot intermixing for photonic devices," Proc. 5th IEEE Conf. on Nanotechnology, (2005).
8. Bhattacharyya, D., Saher Helmy, A., Bryce, A. C., Avrutin, E. A. and Marsh, J. H., "Selective control of selforganized In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dot properties: Quantum dot intermixing," J. Appl. Phys. 88(8), 4619 (2000).
9. Pépin, A., Vieu, C., Schneider, M., Launois, H., and Nissim, Y., "Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures," J. Vac. Sci. Technol. B 15(1), 142-153 (1997).
10. Deppe, D. G., Guido, L. J., Holonyak, Jr., N., Hsieh, K. C., Burnham, R. D., Thornton, R. L., and Paoli, T. L., "Stripe-geometry quantum well heterostructure Al[sub x]Ga[sub 1 - x]As-GaAs lasers defined by defect diffusion," Appl. Phys. Lett. 49(9), 510 (1986).
11. Deenapanray, P. N. K., Tan, H. H., and Jagadish, C., "Influence of SiOx, capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells," Materials Research Society Symp. Proc. 607, 491-502 (2000).
12. Perret, N., Morris, D., Franchomme-Fossé, L., Côté, R., Fafard, S., Aimez, V. and Beauvais, "Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots," J. Phys. Rev. B 62(8), 5092-5099 (2000).
13. Zhao, J. Chen, J., Feng, Z. C., Chen, J. L., Liu, R. and Xu, G., "Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing," Thin Solid Films 498, 179-182 (2006).
14. Choi, W. J., Han, S. M., Shah, S. I., Choi, S. G., Woo, D. H., Lee, S., Kim, S. H., Lee, J. I., Kang, K. N. and Cho, J., "Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer," IEEE J. Selected Topics in Quantum Electronics 4(4), 624-628 (1998).
15. Choi, W. J., Lee, S., Kim, Y., Kim, S. K., Lee, J., I., Kang, K., N., Park, N., Park, H. L., and Cho, K., "Dielectric cap disordering of GaAs/AIGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer," J. Materials Science Lett. 14(20), 1433-1435 (1995).
16. Laidig, W. D., Holonyak, Jr., N., Camras, M. D., Hess, K., Coleman, J. J., Dapkus, P. D., and Bardeen, J., "Disorder of an AlAs-GaAs superlattice by impurity diffusion," Appl. Phys. Lett. 38, 776 (1981).
17. Kowalski, O. P., Hamilton, C. J., McDougall, S. D., Marsh, J. H., Bryce, A. C., De La Rue, R. M., Vogele, B., Stanley, C. R., Button, C. C., and Roberts, J. S., "A universal damage induced technique for quantum well intermixing," Appl. Phys. Lett. 72, 581 (1998).