Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 746-757

  Sengupta, Deepak ^a   Jandhyala, Vikram ^b   Kim, Sangsig ^c   Fang, Weich ^c   Malin, Jay ^c   Apostolakis, Peter ^c   Hseih, Kwong Chi ^c   Chang, Yia Chung ^d   Chuang, Shun Lien ^c   Bandara, Sumith ^a   Gunapala, Sarath ^a   Feng, Milton ^c   Michielssen, Eric ^c   Stillman, Greg ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b ANSOFT CORPORATION   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

Absolute response; Dark current characteristics; Focal plane array; Impurity free vacancy disordering; Peak response wavelength; Quantum efficiency; Quantum well infrared photodetectors; Rapid thermal annealing; Red shift

Indexed keywords

ABSORPTION SPECTROSCOPY; ENERGY GAP; PHOTODETECTORS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

IMPURITY-FREE VACANCY DISORDERING (IFVD); QUANTUM-WELL INFRARED PHOTODETECTORS (QWIPS);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032118097     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720488     Document Type: Article

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