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Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices

(3) Asano, Tetsuya a Fang, Zhaoqiang b Madhukar, Anupam a

a University of Southern California (United States)

b WRIGHT STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; DEEP LEVEL; DEVICE CHARACTERISTICS; ENERGY PROFILE; GAAS; GAAS(001); GROWTH CONDITIONS; HIGH QUALITY; INGAAS/GAAS; LOW DENSITY; LOW TEMPERATURES; MIGRATION ENHANCED EPITAXY; OPTIMAL GROWTH; OUT-DIFFUSION; PERFORMANCE LIMITATIONS; QUANTUM DOT; QUANTUM DOT DEVICES; QUANTUM DOT LAYERS; SELF ASSEMBLED QUANTUM DOTS; SPATIAL PROFILES; STRAIN-INDUCED DEFECTS;

CRYSTAL GROWTH; DETECTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; INFRARED LASERS; LATTICE MISMATCH; OPTICAL WAVEGUIDES; QUANTUM DOT LASERS; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77951582595 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3359704 Document Type: Article

Times cited : (30)

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