Impurity free vacancy disordering of InGaAs quantum dots

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7544-7548

  Lever, P ^a   Tan, H H ^a   Jagadish, C ^a  

^a Res Sch of Phys Sci and Eng   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); DIELECTRIC FILMS; DIFFUSION IN SOLIDS; HIGH TEMPERATURE EFFECTS; IMPURITIES; SEMICONDUCTOR QUANTUM DOTS; THERMAL EXPANSION;

CAPPING; SINGLE LAYERS; THERMAL INTERDIFFUSION; VACCANCY;

SEMICONDUCTING INDIUM;

EID: 11044224580     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803948     Document Type: Article

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