Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3927-3931

  Chia, C K ^a,b   Chua, S J ^a,b   Wang, Y J ^a   Yong, A M ^a   Chow, S Y ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Impurity free vacancy disordering; Intermixing; Molecular beam epitaxy; Optical properties; Photonic integration; Quantum dots; Rapid thermal annealing

Indexed keywords

ANNEALING; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC CAPPING; IMPURITY FREE VACANCY DISORDERING; PHOTOLUMINESCENCE (PL) MEASUREMENTS; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846925074     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.011     Document Type: Article

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