Simulation of life testing procedures for estimating long-term degradation and lifetime of AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2554-2560

  Heller, Eric R ^a,b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

Degradation; FETs; GaN; GaN AlGaN; HEMTs; HFETs; Life estimation; Life testing; MODFETs; Reliability; Simulation; Thermal characterization; Thermal resistance

Indexed keywords

EXTRAPOLATION; FINITE ELEMENT METHOD; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

FETS; GAN; GAN/ALGAN; HEMTS; HFETS; LIFE ESTIMATION; LIFE TESTING; MODFETS; RELIABILITY; SIMULATION; THERMAL CHARACTERIZATION; THERMAL RESISTANCE;

DEGRADATION;

EID: 53649084649     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003220     Document Type: Article

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