Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications

ACS Applied Materials and Interfaces

Volumn 3, Issue 1, 2011, Pages 1-6

  Jeon, Sanghun ^a   Park, Sungho ^a,b   Song, Ihun ^a   Hur, Ji Hyun ^a   Park, Jaechul ^a   Kim, Hojung ^a   Kim, Sunil ^a   Kim, Sangwook ^a   Yin, Huaxiang ^a   Chung, U In ^a   Lee, Eunha ^a   Kim, Changjung ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Daejin University   (South Korea)

Author keywords

Amorphous oxide semiconductor; Image sensor; In Ga Zn O; Low frequency noise; Nanometer scale; Thin film transistor

Indexed keywords

1/F NOISE; ACTIVE REGIONS; AMORPHOUS OXIDE SEMICONDUCTORS; CIS STRUCTURE; DEVICE PERFORMANCE; DOUBLE LAYERS; ETCHING PROCESS; FABRICATION TEMPERATURE; GATE LENGTH; HIGH OUTPUT; HIGH-DENSITY; HYBRID DEVICES; IN-GA-ZN-O; INNOVATIVE APPROACHES; LOW-FREQUENCY NOISE; LOW-PARASITIC; METAL OXIDE SEMICONDUCTOR; NANOELECTRONIC DEVICES; NANOMETER SCALE; NEW DEVICES; NOVEL DEVICES; OXIDE COMPONENTS; PHYSICAL LIMITATIONS; PROCESS SIMULATION TOOLS; SELF-ALIGNED; SENSOR APPLICATIONS; SENSOR ARCHITECTURES; SILICON CIRCUITS; THREE-DIMENSIONAL (3D); TOP GATE;

AMORPHOUS FILMS; AMORPHOUS SILICON; EQUIPMENT; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGE QUALITY; IMAGE SENSORS; NANOELECTRONICS; SILICON OXIDES; THERMAL NOISE; THIN FILM TRANSISTORS; THIN FILMS; THREE DIMENSIONAL; ZINC;

SEMICONDUCTING SILICON COMPOUNDS;

GALLIUM; INDIUM; OXIDE; ZINC;

CHEMISTRY; INFRARED SPECTROSCOPY; INSTRUMENTATION; LETTER; NANOTECHNOLOGY; SEMICONDUCTOR;

GALLIUM; INDIUM; NANOTECHNOLOGY; OXIDES; SEMICONDUCTORS; SPECTROSCOPY, FOURIER TRANSFORM INFRARED; ZINC;

EID: 79953043496     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am1009088     Document Type: Article

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