SCOPUS 정보 검색 플랫폼

Volumn 32, Issue 4, 2011, Pages 467-469

Mechanism of stress memorization technique (SMT) and method to maximize its effect

(10) Pandey, S M a Liu, J a Hooi, Z S a Flachowsky, S b Herrmann, T b Tao, W a Benistant, F a See, A a Chu, S a Samudra, G S c

a GLOBALFOUNDRIES SINGAPORE PTE LTD (Singapore)

b GLOBALFOUNDRIES (Germany)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

Laser annealing (LSA); stress; stress memorization technique (SMT); TCAD

Indexed keywords

EXPERIMENTAL DATA; FUNDAMENTAL THEORY; GATE OXIDE; LASER ANNEALING; PREDICTIVE CAPABILITIES; SMT PROCESS; STRESS MEMORIZATION TECHNIQUE (SMT); STRESS MEMORIZATION TECHNIQUES; TCAD; THERMAL ANNEALS; THERMAL PROPERTIES;

MATERIALS PROPERTIES; NITRIDES; POLYSILICON; SILICON COMPOUNDS; SILICON OXIDES; THERMODYNAMIC PROPERTIES;

AMORPHOUS SILICON;

EID: 79953041150 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2011.2108634 Document Type: Article

Times cited : (12)

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