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Volumn 42, Issue 2 A, 2003, Pages
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Molecular beam epitaxy growth of single-domain and high-quality ZnO layers on nitrided (0001) sapphire surface
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Author keywords
rf MBE; Rotation domain; Sapphire nitridation; Wide gap semiconductors; ZnO
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Indexed keywords
FILM GROWTH;
MOLECULAR BEAM EPITAXY;
NITROGEN;
PLASMA APPLICATIONS;
SAPPHIRE;
SUBSTRATES;
SURFACES;
X RAY DIFFRACTION;
FULL WIDTH AT HALF MAXIMUM;
NITRIDATION;
RADIO FREQUENCY PLASMA ASSISTED MOLECULAR BEAM EPITAXY;
ROTATION DOMAINS;
ZINC OXIDE;
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EID: 0037318830
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.42.L99 Document Type: Letter |
Times cited : (38)
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References (15)
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