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Volumn 42, Issue 2 A, 2003, Pages

Molecular beam epitaxy growth of single-domain and high-quality ZnO layers on nitrided (0001) sapphire surface

Author keywords

rf MBE; Rotation domain; Sapphire nitridation; Wide gap semiconductors; ZnO

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA APPLICATIONS; SAPPHIRE; SUBSTRATES; SURFACES; X RAY DIFFRACTION;

EID: 0037318830     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.L99     Document Type: Letter
Times cited : (38)

References (15)
  • 6
    • 0242678171 scopus 로고    scopus 로고
    • Proc. 8th IUMRS-ICEM2002, Xi'an, China, 2002
    • A. Yoshikawa and K. Xu: Proc. 8th IUMRS-ICEM2002, Xi'an, China, 2002, to be published in Opt. Mater. 20 (2002).
    • (2002) Opt. Mater. , vol.20
    • Yoshikawa, A.1    Xu, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.