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Journal of Applied Physics

Volumn 107, Issue 2, 2010, Pages

Temperature behavior of electron-acceptor transitions and oxygen vacancy recombinations in ZnO thin films

(5) Meng, Xiangdong a Shi, Zhiming a Chen, Xiaobing a Zeng, Xianghua a Fu, Zhuxi b

a YANGZHOU UNIVERSITY (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-ACCEPTOR TRANSITION; EMISSION LINES; FREE ELECTRON; FREE EXCITONS; GREEN BAND; GREEN EMISSIONS; NEUTRAL ACCEPTORS; NEUTRAL DONOR; PHOTOLUMINESCENCE PROPERTIES; PL SPECTRA; ROOM TEMPERATURE; SINGLY IONIZED OXYGEN; TEMPERATURE BEHAVIOR; TEMPERATURE DEPENDENT; ULTRAVIOLET EMISSION; ZNO FILMS; ZNO THIN FILM;

EPITAXIAL GROWTH; EXCITONS; METALLIC FILMS; OXYGEN; OXYGEN VACANCIES; VACANCIES; ZINC; ZINC OXIDE;

LEAKAGE (FLUID);

EID: 75749090070 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3284101 Document Type: Article

Times cited : (33)

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