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Volumn 109, Issue 5, 2011, Pages

Electrostatic modification of oxide semiconductors by electric double layers of microporous SiO2-based solid electrolyte

(6) Jiang, Jie a,b Dai, Minzhi b Sun, Jia a Zhou, Bin a Lu, Aixia a Wan, Qing a,b

a HUNAN UNIVERSITY (China)

b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; CAPACITIVE COUPLINGS; CARRIER DENSITY; CHANNEL RESISTANCE; CONDENSED MATTER; DEVICE SIMULATIONS; ELECTRIC DOUBLE LAYER; ELECTROSTATIC MODIFICATION; ELECTROSTATIC MODULATION; INDIUM TIN OXIDE; METAL-TO-INSULATOR TRANSITIONS; METALLIC CONDUCTIVITY; MICROPOROUS; NEW OPPORTUNITIES; ORDERS OF MAGNITUDE; OXIDE SEMICONDUCTOR; TRANSFER CHARACTERISTICS;

COMPUTER SIMULATION; ELECTROCHEMISTRY; ELECTRONIC PROPERTIES; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; METAL INSULATOR TRANSITION; MICROPOROSITY; MODULATION; SILICON COMPOUNDS; TIN; TIN OXIDES;

SOLID ELECTROLYTES;

EID: 79952995413 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3553869 Document Type: Article

Times cited : (7)

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