One-shadow-mask self-assembled ultralow-voltage coplanar homojunction thin-film transistors

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1137-1139

  Lu, Aixia ^a,b   Sun, Jia ^a   Jiang, Jie ^a   Wan, Qing ^a,b  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b HUNAN UNIVERSITY   (China)

Author keywords

Coplanar homojunction; low voltage transistors; self assembled channel

Indexed keywords

CHANNEL LAYERS; DIFFRACTION METHODS; HOMOJUNCTION; INDIUM TIN OXIDE; LOW-VOLTAGE; LOW-VOLTAGE TRANSISTORS; MAGNETRON-SPUTTERING DEPOSITION; MASK PROCESS; MICRO-POROUS; ON/OFF RATIO; OPERATION VOLTAGE; SELF-ASSEMBLED; SELF-ASSEMBLING; SOURCE/DRAIN ELECTRODES; SPECIFIC CAPACITANCE; SUBTHRESHOLD SWING; ULTRA-LOW-VOLTAGE;

GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; SOLID ELECTROLYTES; TIN; TITANIUM COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 77957586512     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2061834     Document Type: Article

References (17)

1. C. R. Kagan and P. Andry, Thin-Film Transistors. New York: Marcel Dekker, 2003.
2. A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, "Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor," Appl. Phys. Lett., vol.94, no.13, p. 133 502, Mar. 2009.
3. K. M. Chang, G. M. Lin, C. C. Chen, and M. F. Hsieh, "A novel four-mask-step low-temperature polysilicon thin-film transistor with selfaligned raised source/drain (SARSD)," IEEE Electron Device Lett., vol.28, no.1, pp. 39-41, Jan. 2007.
4. R. Hayashi, A. Sato, M. Ofuji, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, "Improved amorphous In-Ga-Zn-O TFTs," in Proc. SID Int. Symp. Dig. Tech. Papers, Apr. 2008, vol. 39, no. 42, pp. 621-624.
5. C. H.Wu, H. H. Hsieh, C.W. Chien, and C. C.Wu, "Self-aligned top-gate coplanar In-Ga-Zn-O thin-film transistors," J. Display Technol., vol.5, no.12, pp. 515-519, Dec. 2009.
6. K. D. Kim and C. K. Song, "Low voltage pentacene thin film transistors employing a self-grown metal-oxide as a gate dielectric," Appl. Phys. Lett., vol.88, no.23, p. 233 508, Jun. 2006.
7. I. D. Kim, M. H. Lim, K. Kang, H. G. Kim, and S. Y. Choi, "Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering," Appl. Phys. Lett., vol.89, no.2, p. 022 905, Jul. 2006.
8. 4 thin film transistors using high-k MgO-Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate," Appl. Phys. Lett., vol.93, no.3, p. 032 901, Jul. 2008.
9. J. B. Kim, H. C. Fuentes, and B. Kippelen, "High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator," Appl. Phys. Lett., vol.93, no.24, p. 242 111, Dec. 2008.
10. J. Lee, L. G. Kaake, J. H. Cho, X. Y. Zhu, T. P. Lodge, and C. D. Frisbie, "Ion gel-gated polymer thin-film transistors: Operating mechanism and characterization of gate dielectric capacitance, switching speed, and stability," J. Phys. Chem. C, vol.113, no.20, pp. 8972-8981, Apr. 2009.
11. H. T. Yuan, H. Shimotani, A. Tsukazaki, A. Ohtomo, M. Kawasaki, and Y. Iwasa, "High-density carrier accumulation in ZnO field-effect transistors gated by electric double layers of ionic liquids," Adv. Funct. Mater., vol.19, no.7, pp. 1046-1053, Apr. 2009.
12. 2 with huge electric-double-layer capacitance for low-voltage indium tin oxide thinfilm transistors," Appl. Phys. Lett., vol.95, no.22, p. 222 905, Nov. 2009.
13. A. Facchetti, "Dielectric materials: Gels excel," Nat. Mater., vol.7, no.11, pp. 839-840, Nov. 2008.
14. J. Kawamura, R. Sato, S. Mishina, and M. Shimoji, "AC conductivity of Li2O-Na2O-B2O3 mixed-alkali glasses: Analysis due to transition rate distribution," Solid State Ionics, vol. 25, no. 2/3, pp. 155-164, Mar. 1987.
15. M. Venkateswarlu and N. Satyanarayana, "AC conductivity studies of silver based fast ion conducting glassy materials for solid state batteries," Mater. Sci. Eng. B, vol.54, no.3, pp. 189-195, Feb. 1998.
16. N. Bagdassarov, H.-C. Freiheit, and A. Putnis, "Ionic conductivity and pressure dependence of trigonal-to-cubic phase transition in lithium sodium sulphate," Solid State Ionics, vol.143, no.3, pp. 285-296, Jul. 2001.
17. P. Cosseddu, J.-O. Vogel, B. Fraboni, J. P. Rabe, N. Koch, and A. Bonfiglio, "Continuous tuning of organic transistor operation from enhancement to depletion mode," Adv. Mater., vol.21, no.3, pp. 344-348, Jan. 2009.