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Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Microporous SiO2 with huge electric-double-layer capacitance for low-voltage indium tin oxide thin-film transistors

(4) Lu, Aixia a Sun, Jia a Jiang, Jie a Wan, Qing a

a HUNAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE LAYERS; DOUBLE-LAYER CAPACITANCE; FIELD-EFFECT; GATE VOLTAGE SWING; INDIUM TIN OXIDE; LOW OPERATING VOLTAGE; LOW POWER; LOW-VOLTAGE; MICROPOROUS; ON/OFF RATIO; ROOM TEMPERATURE; SPECIFIC CAPACITANCE; SUBTHRESHOLD; TEMPERATURE SENSITIVE SUBSTRATES;

CAPACITANCE; DIELECTRIC FILMS; ELECTROCHEMICAL ELECTRODES; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; MICROPOROSITY; PHOTOLITHOGRAPHY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THERMAL EFFECTS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TIN;

FIELD EFFECT TRANSISTORS;

EID: 71949120235 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3271029 Document Type: Article

Times cited : (58)

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