Thermionic field emission transport in carbon nanotube transistors

ACS Nano

Volumn 5, Issue 3, 2011, Pages 1756-1760

  Perello, David J ^a   Lim, Seong Chu ^b   Chae, Seung Jin ^b   Lee, Innam ^a   Kim, Moon J ^c   Lee, Young Hee ^b   Yun, Minhee ^a  

^a University of Pittsburgh   (United States)

^b Sungkyunkwan University   (South Korea)

^c The University of Texas at Dallas   (United States)

Author keywords

carbon nanotube; differential conductance; electrical transport; saturation current; schottky barrier; thermionic field emission

Indexed keywords

DIFFERENTIAL CONDUCTANCE; ELECTRICAL TRANSPORT; SATURATION CURRENT; SCHOTTKY BARRIERS; THERMIONIC FIELD EMISSION;

CHEMICAL VAPOR DEPOSITION; CHROMIUM; ELECTRIC PROPERTIES; FIELD EMISSION; GAS SENSING ELECTRODES; GOLD COATINGS; HAFNIUM; METALS; PALLADIUM; SCHOTTKY BARRIER DIODES; SENSORS; TRANSPORT PROPERTIES; WORK FUNCTION;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; CRYSTALLIZATION; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; TEMPERATURE; ULTRASTRUCTURE;

COMPUTER-AIDED DESIGN; CRYSTALLIZATION; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOTUBES, CARBON; PARTICLE SIZE; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 79952972884     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn102343k     Document Type: Article

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