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Volumn 519, Issue 11, 2011, Pages 3569-3572

Characterization of M-plane GaN film grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy

Author keywords

Lithium gallate; M plane gallium nitride; Molecular beam epitaxy; Photoluminescence; Raman scattering; X ray diffraction

Indexed keywords

GAN CRYSTALS; GAN FILM; GAN THIN FILMS; LITHIUM GALLATE; M-PLANE; MICRO-RAMAN SCATTERING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

EID: 79952739943     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.275     Document Type: Article
Times cited : (11)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.