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Journal of Crystal Growth

Volumn 312, Issue 10, 2010, Pages 1665-1669

Growth of A-plane GaN on (0 1 0) LiGaO2 by plasma-assisted MBE

(5) Schuber, R a Chou, M M C b Vincze, P a Schimmel, Th a Schaadt, D M a

a KARLSRUHE INSTITUTE OF TECHNOLOGY (Germany)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

A3. Molecular beam epitaxy; B1. GaN; B1. LiGaO2; B1. Non polar nitrides

Indexed keywords

A-PLANE; A-PLANE GAN; B1. GAN; B1. LIGAO2; HETEROEPITAXY; HIGH PHASE PURITY; LATTICE-MATCHED; MORPHOLOGICAL ANALYSIS; NON-POLAR; NON-POLAR GAN; PLASMA-ASSISTED MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTIONS; RMS ROUGHNESS; SCANNING ELECTRONS;

ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WIRES; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 77950299274 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.02.030 Document Type: Article

Times cited : (14)

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