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Volumn 518, Issue 23, 2010, Pages 6773-6776

Growth of M-plane GaN on (100) LiGaO2 by plasma-assisted molecular beam epitaxy

Author keywords

Crystal structure; Gallium nitride; Lithium gallium oxide; Molecular beam epitaxy; Non Polar nitrides

Indexed keywords

GAN FILM; HIGH PHASE PURITY; M-PLANE; MORPHOLOGICAL ANALYSIS; NON-POLAR; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTIONS; SCANNING ELECTRONS; SUBSTRATE SURFACE; THERMAL-ANNEALING;

EID: 77956228394     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.06.031     Document Type: Article
Times cited : (13)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.