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Volumn 518, Issue 23, 2010, Pages 6773-6776
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Growth of M-plane GaN on (100) LiGaO2 by plasma-assisted molecular beam epitaxy
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Author keywords
Crystal structure; Gallium nitride; Lithium gallium oxide; Molecular beam epitaxy; Non Polar nitrides
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Indexed keywords
GAN FILM;
HIGH PHASE PURITY;
M-PLANE;
MORPHOLOGICAL ANALYSIS;
NON-POLAR;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTIONS;
SCANNING ELECTRONS;
SUBSTRATE SURFACE;
THERMAL-ANNEALING;
ATOMIC FORCE MICROSCOPY;
CRYSTAL ATOMIC STRUCTURE;
ELECTRON DIFFRACTION;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LITHIUM;
MOLECULAR BEAM EPITAXY;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
MOLECULAR BEAMS;
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EID: 77956228394
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.06.031 Document Type: Article |
Times cited : (13)
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References (17)
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