Past, present and future: SiGe and CMOS transistor scaling

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 3-17

  Kuhn, K J ^a   Murthy, A ^a   Kotlyar, R ^a   Kuhn, M ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GERMANIUM OXIDES; MOSFET DEVICES; SILICON;

BIAXIAL STRAINS; CMOS SCALING; CMOS TRANSISTORS; HIGH MOBILITY; HIGH-K METAL GATES; MOSFET SCALING; ULTRA THIN BODY DEVICES; UNI-AXIAL STRAINS;

SI-GE ALLOYS;

EID: 79952691810     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487530     Document Type: Conference Paper

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