Structures responsible for radiative and non-radiative recombination activity of dislocations in silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 991-995

  Mchedlidze, Teimuraz ^a   Arguirov, Tzanimir ^a,b   Kononchuk, Oleg ^c   Trushin, Maxim ^a   Kittler, Martin ^a,b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

Dislocation network; Dislocation related uminescence; Dislocations; Photonics; Recombination; Silicon

Indexed keywords

BONDED SI WAFERS; BONDED WAFERS; COMMUNICATION COMPONENTS; DIRECT BONDING; DISLOCATION NETWORKS; DISLOCATION-RELATED UMINESCENCE; DISLOCATIONS; LIGHT EMITTING DEVICES; MINORITY CARRIER; MISALIGNMENT ANGLES; NON-RADIATIVE RECOMBINATIONS; ON CHIPS; OPTIMAL ALIGNMENTS; RADIATIVE RECOMBINATION; RECOMBINATION; SI WAFER;

ALIGNMENT; CRYSTAL ORIENTATION; OPTICAL COMMUNICATION; SCREW DISLOCATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; WAFER BONDING;

EDGE DISLOCATIONS;

EID: 79952649254     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000367     Document Type: Article

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