SCOPUS 정보 검색 플랫폼

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 113-118

Internal dissolution of buried oxide in SOI wafers

(3) Kononchuk, Oleg a Boedt, Francois a Allibert, Frederic a

a PARC TECHNOLOGIQUE DES FONTAINES (France)

Author keywords

Oxide dissolution; Oxygen transport; Silicon on insulator

Indexed keywords

DISSOLUTION; EPILAYERS; ETCHING; SILICON ON INSULATOR TECHNOLOGY; THERMODYNAMIC PROPERTIES; OXYGEN; SILICON OXIDES;

BURIED OXIDES; LINEAR-PARABOLIC LAWS; OXIDE DISSOLUTION; OXYGEN TRANSPORT; DISSOLUTION RATES; HIGH-TEMPERATURE ANNEAL; INTERSTITIAL OXYGEN; LINEAR-PARABOLIC LAW; THERMODYNAMIC MODEL;

SILICON WAFERS;

EID: 38549174084 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (21)

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