Combined XBIC/μ-XRF/μ-XAS/DLTS investigation of chemical character and electrical properties of Cu and Ni precipitates in silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 8, 2009, Pages 1868-1873

  Trushin, M ^a   Vyvenko, O ^a,b   Seifert, W ^c   Kittler, M ^c   Zizak, I ^d   Erko, A ^d   Seibt, M ^e   Rudolf, C ^e  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c IHP   (Germany)

^d HAHN MEITNER INSTITUT   (Germany)

^e UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; BROAD BANDS; CU PRECIPITATES; DIRECT WAFER BONDING; DISLOCATION NETWORKS; DLTS; DLTS METHOD; ELECTRICAL PROPERTY; MICRO-DEFECTS; MICRO-PROBES; NI ATOMS; NI PARTICLES; SI PRECIPITATES; SILICON LATTICES; STRUCTURAL DEFECT;

CONTAMINATION; CRYSTAL ATOMIC STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC PROPERTIES; NICKEL; OXYGEN; PRECIPITATION (CHEMICAL); SILICON WAFERS; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 71049178250     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881430     Document Type: Conference Paper

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