Engineering of dislocation-loops for light emission from silicon diodes

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 303-308

  Mchedlidze, T ^a   Arguirov, T ^a,b   Kittler, M ^a,b   Hoang, T ^c   Holleman, J ^c   LeMinh, P ^c   Schmitz, J ^c  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Dislocation loops; Dislocation related luminescence; Si based LED

Indexed keywords

BAND STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC FIELDS; ION IMPLANTATION; LIGHT EMITTING DIODES; LUMINESCENCE; BLUE SHIFT; DEFECTS; DIODES; LIGHT; RED SHIFT; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON; STARK EFFECT;

BLUE-SHIFT; DISLOCATION LOOPS; DISLOCATION LUMINESCENCE; INJECTION LEVEL; CARRIER INJECTION; DISLOCATION LOOP; DISLOCATION RELATED LUMINESCENCES; INJECTED CHARGE CARRIERS; LUMINESCENCE PROPERTIES; SI-BASED LEDS; SIGNAL INTENSITIES; SILICON LIGHT EMITTING DIODES;

SEMICONDUCTING SILICON; POWER SEMICONDUCTOR DIODES;

EID: 38549111870     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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