Regular dislocation networks in Si. Part II: Luminescence

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 503-510

  Mchedlidze, T ^a   Wilhelm, T ^b   Yu, X ^a,c   Arguirov, T ^a,c   Jia, G ^a,c   Reiche, M ^b   Kittler, M ^a,c  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c IHP   (Germany)

Author keywords

Dislocation networks; Dislocation related luminescence; Si based LED

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON TRANSITIONS; LIGHT EMITTING DIODES; LUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; PRECIPITATES; DEFECTS; INDUCED CURRENTS; LIGHT; LIGHT REFLECTION; SILICON WAFERS; WAFER BONDING;

DISLOCATION NETWORKS; DISLOCATION RELATED LUMINESCENCE; OXIDE PRECIPITATES; PRE-BONDING SURFACES; BAND-TO-BAND TRANSITION; BONDING INTERFACES; DISLOCATION RELATED LUMINESCENCES; LIGHT BEAM INDUCED CURRENTS; RADIATIVE TRANSITIONS; RECOMBINATION CENTERS; SI-BASED LEDS;

SILICON WAFERS; SILICON COMPOUNDS;

EID: 38549168918     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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