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Applied Physics Letters

Volumn 98, Issue 9, 2011, Pages

Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation

(4) Pastuović, Zeljko a Vittone, Ettore b Capan, Ivana a Jakšić, Milko a

a RUDER BO KOVI INSTITUTE (Croatia)

b UNIVERSITY OF TURIN (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEFECTS; CRITICAL DISPLACEMENT; DEPTH DISTRIBUTION; DEPTH PROFILE; DIVACANCIES; EQUIVALENT DAMAGE; INDUCED CHARGES; ION BEAM IRRADIATION; ION PROBE; ION-BEAM INDUCED CHARGES; IONIZING PARTICLES; MEGA-ELECTRON-VOLT; MODEL-BASED; NONIONIZING ENERGY LOSS; SILICON DIODES;

BEAM PLASMA INTERACTIONS; DEFECTS; DIODES; ELECTROMAGNETIC INDUCTION; ENERGY DISSIPATION; ION BEAMS; ION BOMBARDMENT; IONS; PROBABILITY; PROBES; RADIATION DAMAGE; SEMICONDUCTING SILICON COMPOUNDS;

ION MICROSCOPES;

EID: 79952364779 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3559000 Document Type: Article

Times cited : (20)

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