Displacement damage degradation of ion-induced charge in Si pin photodiode

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 444-447

  Onoda, Shinobu ^a,b   Hirao, Toshio ^b   Laird, Jamie Stuart ^b   Mori, Hidenobu ^a   Itoh, Hisayoshi ^b   Wakasa, Takeshi ^a   Okamoto, Tsuyoshi ^a   Koizumi, Yoshiharu ^a  

^a TOKAI UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Collected charge; Displacement damage effect; Non ionizing energy loss; Single event effect

Indexed keywords

CHARGE CARRIERS; ENERGY DISSIPATION; HEAVY IONS; HIGH ENERGY PHYSICS; ION BEAMS; PHOTODIODES; RADIATION DAMAGE; RADIATION HARDENING;

SINGLE-EVENT PHENOMENON (SEP);

ION IMPLANTATION;

EID: 0038075210     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00790-0     Document Type: Conference Paper

References (8)

1. Sexton F.W., Horn K.M., Doyle B.L., Shaneyfelt M.R., Meisenheimer T.L. IEEE Trans. Nucl. Sci. 42:1995;1940.
2. J.S. Laird, T. Hirao, S. Onoda, H. Mori, H. Itoh, AWAD (2002) Proceedings.
3. Laird J.S., Hirao T., Mori H., Onoda S., Kamiya T., Itoh H. Nucl. Instr. and Meth. B. 181:2001;87.
4. Mori H., Hirao T., Laird J.S., Onoda S., Kamiya T., Itoh H., Okamoto T., Koizumi Y. Nucl. Instr. and Meth. B. 181:2001;340.
5. Messenger S.R., Jackson E.M., Burke E.A., Walters R.J., Xapsos M.A., Summers G.P. J. Appl. Phys. 86:1999;1230.
6. Srour J.R., Lo D.H. IEEE Trans. Nucl. Sci. 47:2000;2451.
7. Messenger S.R., Burke E.A., Summers G.P., Xapsos M.A., Walters R.J., Jackson E.M., Waver B.D. IEEE Trans. Nucl. Sci. 46:1999;1595.
8. Kurokawa M., Motobayashi T., Ieki K., Shimoura S., Murakami H., Ikeda Y., Moriya S., Yanagisawa Y., Nomura T. IEEE Trans. Nucl. Sci. 42:1995;163.