A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 1340-1344

  Nipoti, R ^a   Donolato, C ^a   Govoni, D ^a   Rossi, P ^b   Egeni, G P ^c   Rudello, V ^c  

^a CNR   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c LABORATORI NAZIONALI DI LEGNARO   (Italy)

Author keywords

Carrier recombination; Collection efficiency; Ion damage

Indexed keywords

HELIUM; ION BEAMS; ION BOMBARDMENT; MICROSCOPIC EXAMINATION; RADIATION DAMAGE; SEMICONDUCTING SILICON;

CHARGE COLLECTION EFFICIENCY; ION BEAM INDUCED CHARGE (IBIC) MICROSCOPY; ION FLUENCE;

SEMICONDUCTOR DIODES;

EID: 0032020288     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00849-5     Document Type: Article

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