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Volumn , Issue , 2010, Pages 163-170

Characterization and failure analysis of 3D integrated semiconductor devices-novel tools for fault isolation, target preparation and high resolution material analysis

Author keywords

[No Author keywords available]

Indexed keywords

FAULT ISOLATION; FAULT LOCALIZATION; FLIP CHIP; FOCUSED ION BEAM TECHNIQUE; HIGH RATE; HIGH RESOLUTION; INTEGRATED DEVICE; LOCKIN THERMOGRAPHY; MATERIAL ANALYSIS; METHODICAL APPROACH; NON DESTRUCTIVE; TARGET PREPARATION; THROUGH SILICON VIAS;

EID: 79952357688     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (11)

References (13)
  • 5
    • 77649092860 scopus 로고    scopus 로고
    • "Failure analysis of stacked-die devices by combining non-destructive localization and target preparation methods
    • Chr. Schmidt et. al: "Failure analysis of stacked-die devices by combining non-destructive localization and target preparation methods, ISTFA 2009, San Jose USA
    • ISTFA 2009, San Jose USA
    • Schmidt, Chr.1
  • 9
    • 79952320276 scopus 로고    scopus 로고
    • Ph.D. thesis to be published in
    • S. Martens, Ph.D. thesis (to be published in 2010)
    • (2010)
    • Martens, S.1
  • 11
    • 77955210503 scopus 로고    scopus 로고
    • Micro Structure Analysis for System in Package Components - Novel Tools for Fault Isolation, Target Preparation, and High-resolution Material Diagnostics
    • M. Petzold et. al. "Micro Structure Analysis for System in Package Components - Novel Tools for Fault Isolation, Target Preparation, and High-resolution Material Diagnostics", Proceedings of the 60th IEEE Electronic Components and Technology Conference (ECTC), (2010) pp. 1296-1302
    • Proceedings of the 60th IEEE Electronic Components and Technology Conference (ECTC), (2010) , pp. 1296-1302
    • Petzold, M.1
  • 12
    • 79952350096 scopus 로고    scopus 로고
    • Characterization of wafer bonded devices and unfilled Through-Silicon-Vias (TSVs)
    • C. Cassidy et. al: Characterization of wafer bonded devices and unfilled Through-Silicon-Vias (TSVs), ISTFA 2008, Portland USA
    • ISTFA 2008, Portland USA
    • Cassidy, C.1
  • 13
    • 71049188174 scopus 로고    scopus 로고
    • Depth-resolved Photoemission Microscopy for Localization of Leakage Currents in Through Silicon Vias (TSVs)
    • C. Cassidy, F. Renz, J. Kraft, F. Schrank, Depth-resolved Photoemission Microscopy for Localization of Leakage Currents in Through Silicon Vias (TSVs), Proceedings - IPFA (2009) 735-740
    • Proceedings - IPFA (2009) , pp. 735-740
    • Cassidy, C.1    Renz, F.2    Kraft, J.3    Schrank, F.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.