Depth-resolved photoemission microscopy for localization of leakage currents in through silicon vias (TSVs)

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2009, Pages 735-740

  Cassidy, C ^a   Renz, F ^a   Kraft, J ^a   Schrank, F ^a  

^a AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH-RESOLVED; EMISSION MICROSCOPY; FAILURE MECHANISM; FOCAL PLANE; PHOTOEMISSION MICROSCOPY; PHYSICAL FAILURE ANALYSIS; SPATIAL DISTRIBUTION; THROUGH SILICON VIAS;

INTEGRATED CIRCUITS; LEAKAGE (FLUID); LEAKAGE CURRENTS; PHOTOEMISSION; QUALITY ASSURANCE; SAFETY FACTOR; SIZE DISTRIBUTION;

FAILURE ANALYSIS;

EID: 71049188174     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2009.5232734     Document Type: Conference Paper

References (10)

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