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Volumn , Issue , 2010, Pages

Simulation-based analysis of the heat-affected zone during target preparation by pulsed-laser ablation through stacked silicon dies in 3D integrated System-in-Packages

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; ABSORBED ENERGY; ABSORPTION MECHANISMS; CRUCIAL PARAMETERS; DIODE-PUMPED SOLID-STATE LASER; ELECTRON EXCITATIONS; INTEGRATED DEVICE; INTEGRATED SYSTEMS; INVERSE ANALYSIS; IRRADIATED AREA; LASER-CUT; MAXIMUM TEMPERATURE; METAL INTERCONNECTS; MOLDING COMPOUND; MOLTEN SILICON; PENETRATION DEPTH; PULSE DURATIONS; PULSED LASER ABLATION; RAPID-HEATING; REAL DEFECTS; SILICON DIE; SIMULATION METHODS; SIMULATION RESULT; SIMULATION-BASED ANALYSIS; SINGLE LASERS; SYSTEM-IN-PACKAGE; TARGET PREPARATION; THERMAL SIMULATIONS; THERMAL WAVE; TOTAL ENERGY; TRANSIENT TEMPERATURE; VAPORISATION;

EID: 77953697956     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESIME.2010.5464586     Document Type: Conference Paper
Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.