Lock-in-thermography for 3- dimensional localization of electrical defects inside complex packaged devices

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2008, Pages 102-107

  Schmidt, C ^a   Altmann, F ^a   Grosse, C ^a   Lindner, A ^b   Gottschalk, V ^c  

^a FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^b Micronas GmbH Freiburg   (Germany)

^c ELMOS Semiconductor   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; ACTIVE DEFECTS; DEVICE SURFACES; ELECTRICAL DEFECTS; ELECTRICAL EXCITATIONS; HOT SPOTS; INNER DEFECTS; LATERAL RESOLUTIONS; LOCK-IN; MOLD COMPOUNDS; MULTI CHIPS; NON-DESTRUCTIVE; PACKAGED DEVICES; RESISTIVE OPENS; SIGNAL-TO-NOISE RATIOS; SINGLE CHIPS; STACKED DIES; TEMPERATURE FIELDS; TEST DEVICES; THERMAL RESPONSE;

DEFECTS; INTEGRATED CIRCUITS; MOLDS; QUALITY ASSURANCE; REMOTE SENSING; SAFETY FACTOR; SIGNAL TO NOISE RATIO; THERMOGRAPHY (IMAGING); THERMOGRAPHY (TEMPERATURE MEASUREMENT);

FAILURE ANALYSIS;

EID: 63749088416     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1361/cp2008istfal02     Document Type: Conference Paper

References (7)

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3. Hechtl, M. et. al. ,,Localization of Electrical Shorts in Dies and Mold compounds using Magnetic Microscopy and Lock-in-IR-Thermography"
4. Breitenstein, O. et al., "Developments in IR Lock-in Thermography", Proc. 30th Int. Symp. for Testing and Failure Analysis, ASM Intern. Mat. Park, Ohio November 2004, pp. 595-599
5. Breitenstein, et al., "Lock-in IR Microscopy with 1.4 μm Resolution by Using a Solid Immersion Lens", Electronic Device Failure Analysis magazine 8,2006, pp.4-13
6. Breitenstein, O. et al., Microscopic lock in thermography investigation of leakage sites in integrated circuits, Rev. of Scientific Instruments, 71 (2000), 4155-4160
7. nd Electronics System-Integration Technology Conference, London, UK, September 2008, submitted