Ultraviolet electroluminescence from ZnO-based n-i-p light-emitting diodes

IEEE Photonics Technology Letters

Volumn 23, Issue 6, 2011, Pages 353-355

  Lee, Ching Ting ^a   Yan, Jheng Tai ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Li N dual acceptor; p type ZnO film; vapor cooling condensation system; ZnO based light emitting diodes

Indexed keywords

CODEPOSITION; CONDUCTIVE BEHAVIOR; EMISSION ENERGIES; FREE ELECTRON; HOLE LEVELS; LI-N DUAL ACCEPTOR; P-TYPE; P-TYPE ZNO FILM; POST-ANNEALING TEMPERATURE; SAPPHIRE SUBSTRATES; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET EMISSION; ULTRAVIOLET LIGHT-EMITTING DIODES; ZNO; ZNO FILMS;

BEHAVIORAL RESEARCH; BINDING ENERGY; CONDENSATION; CONDUCTIVE FILMS; COOLING; DIODES; DISTILLATION; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLIC FILMS; ULTRAVIOLET RADIATION; VAPORS;

ZINC OXIDE;

EID: 79952176434     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2104945     Document Type: Article

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