Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates

Journal of Applied Physics

Volumn 109, Issue 4, 2011, Pages

  Tsiaoussis, I ^a   Khranovskyy, V ^b   Dimitrakopulos, G P ^a   Stoemenos, J ^a   Yakimova, R ^b   Pecz, B ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b LINKÖPING UNIVERSITY   (Sweden)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION; CONTINUOUS FILMS; EPITAXIALLY GROWN; FREE SURFACES; GEOMETRICAL PHASE ANALYSIS; HIGH-RESOLUTION TEM; NANOPILLAR FORMATION; NANOPILLARS; P-TYPE; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; RESIDUAL STRAINS; SI SUBSTRATES; STRANSKI-KRASTANOV MODE; STRUCTURAL CHARACTERISTICS; STRUCTURAL CHARACTERIZATION; TEM; ZNO; ZNO FILMS; ZNO NANOCRYSTAL;

ATMOSPHERIC CHEMISTRY; CRYSTAL SYMMETRY; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; SILICON CARBIDE; SOIL CONSERVATION; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

SUBSTRATES;

EID: 79952151259     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3549140     Document Type: Article

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