Nanointegration of ZnO with Si and SiC

Physica B: Condensed Matter

Volumn 404, Issue 22, 2009, Pages 4359-4363

  Khranovskyy, V ^a   Tsiaoussis, I ^b   Larsson, L A ^a   Holtz, P O ^a   Yakimova, Rositza ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Crystal growth; Heteroepitaxy; Nanopillars; p n junction; ZnO

Indexed keywords

4H-SIC SUBSTRATE; CATALYST-FREE; CONTROLLED GROWTH; EPITAXIAL RELATIONSHIPS; FIELD EMISSION PROPERTY; FIELD EMITTER; GROWN STRUCTURES; HETEROEPITAXIAL GROWTH; HETEROEPITAXY; LOW CONCENTRATIONS; MATRIX; MICROPHOTOLUMINESCENCE; MOCVD; NANO-SIZED; NANOPILLARS; NANOSCALED; NATIVE DEFECT; NEAR BAND EDGE EMISSIONS; OPTICAL EMISSIONS; P-N JUNCTION; P-TYPE; SELF ORGANIZED GROWTH; SIC SUBSTRATES; SPATIAL UNIFORMITY; SUBLIMATION EPITAXY; ZNO; ZNO NANOSTRUCTURES; ZNO ON SI; ZNO SINGLE CRYSTALS; ZNO STRUCTURES;

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FIELD EMISSION; GRAIN BOUNDARIES; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT EMISSION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; STOICHIOMETRY; SUBSTRATES; SULFUR COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

EPITAXIAL GROWTH;

EID: 71749108477     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.032     Document Type: Article

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