Misorientation-angle dependence of boron incorporation into (0 0 1)-oriented chemical-vapor-deposited (CVD) diamond

Journal of Crystal Growth

Volumn 317, Issue 1, 2011, Pages 60-63

  Ogura, Masahiko ^a   Kato, Hiromitsu ^a   Makino, Toshiharu ^a   Okushi, Hideyo ^a   Yamasaki, Satoshi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. CVD; A1. Doping; A1. p type; A3. Step flow growth; B1. Diamond; B2. Semiconductor

Indexed keywords

A1. CVD; A1. DOPING; A1. P-TYPE; B1. DIAMOND; B2. SEMICONDUCTOR; STEP-FLOW GROWTH;

BORON; BORON COMPOUNDS; DESORPTION; DIAMOND FILMS; DIAMONDS; SEMICONDUCTOR GROWTH; SOIL CONSERVATION;

CHEMICAL VAPOR DEPOSITION;

EID: 79952040983     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.010     Document Type: Article

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